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提出了一种带过载保护功能的真空微电子压力传感器。对传感器的压力敏感膜尺寸、阴阳极间距等结构参数进行了分析计算;针对过载保护的问题,在结构上设计了过载保护环,实现了真空微电子压力传感器的过载自保护功能。采用硅的干、湿法结合的腐蚀、氧化锐化和真空键合等工艺技术,成功地研制出传感器实验样品。对传感器实验样品的参数进行了测试分析,其场致发射阴极锥尖阵列密度达24000个/mm2,起始发射电压为0.5～1V,反向电压≥25V,当正向电压为5V时,单尖发射电流为0.2nA,压力灵敏度为0.1μA/KPa。
A vacuum microelectronic pressure sensor with overload protection is proposed. The structure parameters of the sensor such as the pressure sensitive membrane size and the distance between the anode and the cathode are analyzed and calculated. For the problem of overload protection, the overload protection ring is designed and the over load protection function of the vacuum microelectronic pressure sensor is realized. Using dry and wet silicon combined with corrosion, oxidation and sharpening and vacuum bonding process technology, the successful development of the sensor experimental samples. The parameters of the sensor experimental samples were tested and analyzed. The density of field emission cathode cone tip array was 24000 cells / mm2, the initial emission voltage was 0.5-1V and the reverse voltage was ≥25V. When the forward voltage was 5V, The sharp emission current is 0.2nA and the pressure sensitivity is 0.1μA / KPa.