论文部分内容阅读
An Au layer was evaporated on the top of Ni+ -implanted LEC n-GaP. Two minority peaks appeared on its DLTS spectrum and corresponding deep levels are located at 0.62 and 0.80eV above the valence band (after T2 corrected), respectively. In order to explain this, a calculation of the barrier distribution, Ec(x), was carried out.The distribution of implanted Ni+ N(x,t), was given by LSS theory, considering the diffusion during the post-annealing with time t. As the zero-order approximation, the electrical neutrality condition was used taking the fact that Ni might present in three different charge states into account. The solution of the neutrality equation gave Ec0(x), then inserting it into the Poisson’s equation by this way, iteration procedure was carried out. It was found that the 2nd iteration attended to be converged. The calculated result indicated that within a layer of 5000A from the surface the conduction type was converted to p-type. Thus the minority injection during DLTS measurement was reasonable.
Two minority peaks appeared on its DLTS spectrum and corresponding deep levels are located at 0.62 and 0.80 eV above the valence band (after T2 corrected), respectively. In order To explain this, a calculation of the barrier distribution, Ec (x), was carried out. The distribution of implanted Ni + N (x, t), was given by LSS theory, considering the diffusion during the post-annealing with time t. As the zero-order approximation, the electrical neutrality condition was used taking the fact that Ni might present in three different charge states into account. The solution of the neutrality equation gave Ec0 (x), then inserting it into the Poisson’s equation by this way , iteration procedure was carried out. It was found that the 2nd iteration attended to be converged. The calculated result indicates that within a layer of 5000A from the surface the conduction type was converted to p- type. Thus the minority injection during DLTS mea surement was reasonable.