本文研究了低阻ZnSe晶体在室温下经Er~(3+)离子注入后,退火对它的电学及电致发光性能的影响。文中指出,经N_2气保护退火所制备的ZnSe:Er~(3+)二极管具有MIS结构,I层是由于晶格损伤造成的。文中根据对I层起因的分析,首次提出和实现了在熔融锌中退火可使品格损伤墓本消除,从而制备了掺Er的ZnSe MS二极管,在反向电压下得到Er~(3+)离子的特征发光。 In this paper, the effect of annealing on the electrical and electroluminescent properties of low-resistance ZnSe crystals annealed at Er 3+ ion implantation at room temperature has been investigated. It is pointed out that the ZnSe: Er ~ (3 +) diode fabricated by N_2 gas annealing has a MIS structure and the I layer is caused by the lattice damage. In this paper, based on the analysis of the cause of layer I, for the first time, it is proposed and realized that annealing in molten zinc can eliminate the damage of the damaged specimen, so that Er doped ZnSe MS diodes are prepared and Er ~ (3+) ions are obtained under reverse voltage Features glow.