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对经中子辐照的直拉硅中的本征吸除效应进行了研究 .结果表明 :经中子辐照后 ,直拉硅片经一步短时退火就可以在硅片表面形成完整的清洁区 .清洁区宽度受辐照剂量和退火温度所控制 ,清洁区一旦形成 ,就不随退火时间变化 .大量的缺陷在中子辐照时产生 ,并同硅中氧相互作用 ,加速了硅片体内氧的沉淀 ,是快速形成本征吸除效果的主要因素 ,从而把热历史的影响降到次要地位
The intrinsic absorption effect of Czochralski silicon irradiated by neutron was studied.The results show that after the neutron irradiation, the Czochralski silicon wafer can be completely cleaned The width of the cleaning zone is controlled by the irradiation dose and the annealing temperature, and once the cleaning zone is formed, it does not change with the annealing time. A large number of defects are generated during neutron irradiation and interact with silicon oxygen to accelerate the in vivo The deposition of oxygen is a major factor in the rapid formation of an intrinsic absorptive effect, thereby reducing the impact of thermal history to a secondary position