前言 用Ga-AsCl_3-H_2系统已制备了总电离杂质浓度为～10~(13)cm~3的高纯GaAs外延层,但是卤化物系统控制困难,重复性差,不能完全满足器件和电路发展的需要。1968年,Manasevit等首先报道用有机金属化学气相淀积(MO-CVD)技术制备Ⅲ—Ⅴ族化合物半导体外延薄膜。其后,他们对MO-CVD技术的淀积原理和 Preface High-purity GaAs epitaxial layers with total ionization impurity concentration of ~ 10 ~ (13) cm ~ 3 have been prepared by Ga-AsCl 3 -H 2 system. However, the control of halide systems is difficult and their repeatability is poor. need. In 1968, Manasevit et al. First reported on the preparation of Group III-V compound semiconductor epitaxial films by metalorganic chemical vapor deposition (MO-CVD). Since then, they have demonstrated the principle of MO-CVD deposition