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在以击穿电压V_b和结电咨C_j(-60)作为器件低频参数的基础上,研究了器件低频参数与高频性能的关系,增添电容比C_r(=[C_j(-1)]/[C_j(-60)]作为低频参数.实践表明,L、S波段俘越二极管各有相应的C_r最佳范围,凡具有最佳C_r范围的器件有好的俘越振荡性能.本文还介绍了器件C_r与外延材料的杂质浓度N的关系.可据此关系选抒外延材料的杂质浓度N来制造器件,使得80%以上批次的器件部具有好的俘越振荡性能.
The relationship between the low frequency parameters and the high frequency performance of the device was studied based on the breakdown voltage V_b and the junction frequency C_j (-60) as the low frequency parameters of the device. Adding the capacitance ratio C_r (= [C_j (-1)] / [ C_j (-60)] as a low-frequency parameter.Experiments show that, L, S-band captive diodes have the corresponding C_r optimal range, where the best C_r range of devices have good captive oscillation performance.This article also describes the device C_r and the relationship between the impurity concentration of epitaxial material N. According to the relationship between the selection of the epitaxial material concentration of impurities N to manufacture the device, making more than 80% of the device part of the batch with good captive oscillation performance.