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本文从理论和实验上研究了硅晶体管电流增益的低温特性,建立了电流增益的温度模型阐明了低温时电流增益下降的机理,探讨了采用轻掺杂技术和a-Si发射区获得良好电性能的硅低温晶体管的方法,理论分析和实验结果吻合一致。
In this paper, the low-temperature characteristics of the current gain of the silicon transistor are theoretically and experimentally studied. The temperature model of the current gain is established to clarify the mechanism of the current gain decrease at low temperature. The light-doped technology and the a-Si emitter are used to obtain the good electrical performance Silicon low-temperature transistor method, the theoretical analysis and experimental results are consistent.