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采用PMMA/P(MMA-MAA)/PMMA三层胶结构,通过优化电子束直写电压、束流和显影等工艺参数,得到了理想的光刻胶形貌。利用干法刻蚀和湿法腐蚀相结合的方法实现了双凹槽栅结构。通过优化蒸发功率、蒸发时间及各层金属厚度,解决了栅掉帽的问题。开发了90 nm自对准双凹槽T型栅电子束三层胶光刻工艺技术。应用90 nmT型栅工艺制作了W波段GaAs PHEMT功率放大器及V波段Ga As PHEMT低噪声放大器。测试结果表明,在频率为90~96 GHz、源漏电压5 V、栅源电压-0.3 V、输入功率13 dBm时,功率放大器电路输出功率为20.8 dBm,功率增益为7.8 dB;在频率为57~64 GHz、源漏电压2.5 V、漏极电流55 m A时,低噪声放大器增益大于24 dB,带内噪声系数小于3.5 dB,验证了该工艺技术的可行性和可应用性。
By using PMMA / P (MMA-MAA) / PMMA three-layer adhesive structure, the ideal photoresist morphology was obtained by optimizing the process parameters such as direct write voltage, beam current and development of electron beam. The double-groove gate structure is realized by a combination of dry etching and wet etching. By optimizing the evaporation power, evaporation time and the thickness of the metal layer to solve the problem of the cap off cap. A 90 nm self-aligned double-groove T-grid electron beam three-layer lithography process has been developed. A W-band GaAs PHEMT power amplifier and a V-band Ga As PHEMT LNA were fabricated using a 90 nmT gate process. The test results show that the power amplifier circuit output power is 20.8 dBm and the power gain is 7.8 dB when the frequency is 90-96 GHz, the source-drain voltage is 5 V, the gate-source voltage is -0.3 V and the input power is 13 dBm. At the frequency of 57 ~ 64 GHz, the source-drain voltage is 2.5 V, the drain current is 55 mA, the LNA gain is greater than 24 dB and the in-band noise figure is less than 3.5 dB, which verifies the feasibility and applicability of this technology.