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介绍自行研制的可以施加横向磁场中的垂直Bridgman法晶体生长装置，该装置磁场强度可在0－0．6T围内连续调节，生长区温度梯度达40－70℃／cm．不同磁场强度下进行了HgCdTe晶体生长实验，通过测量分析，研究了轴向和径向组分分布的变化与磁场的关系．实验结果表明，由于磁场对熔体中热对流的作用，尤其是横向磁场与流胞的相互作用，在一定程度上改变生长界面的形状，从而改善HgCdTe晶体径向组分分布的均匀性
The vertical Bridgman crystal growth device which can be applied in the transverse magnetic field is introduced. The magnetic field strength of the device can be continuously adjusted in the range of 0-0.6T, and the temperature gradient in the growth area reaches 40-70 ℃ / cm. The experiment of HgCdTe crystal growth under different magnetic field intensities was carried out. The relationship between the magnetic field and the distribution of axial and radial components was studied by measurement and analysis. The experimental results show that due to the effect of magnetic field on the convection in the melt, especially the interaction between the transverse magnetic field and the flow cell, the shape of the growth interface is changed to a certain extent, so as to improve the uniformity of the radial component distribution of the HgCdTe crystal