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本文介绍了等离子增强化学汽相淀积(简称PECVD)二氧化硅的生长原理.用硅烷(SiH_4)和二氧化碳(CO_2)通过射频电场产生辉光放电等离子体,以此增强化学反应降低淀积温度.在60～300℃下,SiH_4流量为0.5～2.0升/分,CO_2流量为0.2～1.5升/分,淀积压力为0.8～3.5托,射频功率为20～50瓦,极板间距为12～20.5毫米的条件下淀积二氧化硅膜.给出了射频功率、淀积压力、气体流量比等对淀积速率的影响以及红外光谱分析结果.其次,简述了PECVD二氧化硅钝化膜的性能及其在全单片锑化铟红外电荷注入器件(FMInSbIRCID)研制中的应用情况.
In this paper, the growth principle of plasma-enhanced chemical vapor deposition (PECVD) silica is introduced. Glow discharge plasma is generated by RF (SiH 4) and carbon dioxide (CO 2) to enhance the chemical reaction and reduce the deposition temperature At 60-300 ℃, the flow rate of SiH_4 is 0.5-2.0 L / min, the flow rate of CO_2 is 0.2-1.5 L / min, the deposition pressure is 0.8-3.5 Torr, the RF power is 20-50 W and the distance between plates is 12 ~ 20.5 mm, the effect of RF power, deposition pressure and gas flow ratio on the deposition rate and infrared spectroscopy results are given.Secondly, the PECVD silicon dioxide passivation Film performance and its application in the development of a fully monolithic indium antimonide infrared charge injection device (FMInSbIRCID).