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微功率半导体技术结合了两种众所周知的集成电路技术,即互补 MOS 和多晶硅栅技术,从而在开关速度和功耗之间实现了理想的折衷。这些硅栅互补 MOS 逻辑电路具有毫微瓦静态功率的要求,并且在电源电压降至1伏左右时仍能工作。这种新型的电路已经移交生产,并且应用于那些采用小功率电源的装置上——例如采用电池组的可动通信系统、手提轻便计算机和电子手表。多晶硅的栅电极与普通的金属栅相比,有两个优点:较低的阈值电压和较小的电容。阈
Micropower semiconductor technology combines two well-known integrated circuit technologies, complementary MOS and polysilicon gate technologies, to achieve an ideal trade-off between switching speed and power consumption. These silicon gate complementary MOS logic circuits have nano-watt static power requirements and operate when the supply voltage drops to about 1 volt. This new type of circuit has been handed over to production and applied to devices that use low-power power - such as battery-operated mobile communication systems, portable light computers and electronic watches. The polysilicon gate electrode has two advantages over a common metal gate: lower threshold voltage and smaller capacitance. threshold