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研究了掺氮和不掺氮直拉硅单晶中 ,空洞型原生缺陷 (voids)的分布行为和其退火性质 .从两种晶体不同位置取样 ,观察与大尺寸 voids相关的流水花样缺陷 (FPD)沿晶体轴向的分布 ,然后在 10 5 0～ 12 5 0℃下 Ar气中退火不同时间 .实验结果表明在掺氮直拉硅中与较大尺寸 voids相关的 FPD缺陷的密度大量减少 ,其体内这种 FPD缺陷的退火行为与不掺氮直拉硅一样 ,在高温下才能被有效的消除 .这表明在直拉硅中掺氮可以抑制大尺寸的 voids的产生 ,而且掺氮硅中 voids的内壁也有氧化膜存在
The distribution behavior and the annealing properties of voids in nitrogen-doped and non-doped Czochralski silicon single crystals were investigated by sampling the two kinds of crystals at different positions to observe the flow pattern defects (FPDs) associated with large-size voids ) Along the crystal axis and then annealed in Ar gas at different temperatures from 105 to 125 ℃ for different time.The experimental results show that the density of FPD defects associated with larger size voids is greatly reduced in the Czochralski silicon, The annealing behavior of this FPD defect in the body is the same as that of undoped Czochralski Silicon (TMC), which can be effectively eliminated at high temperature, which indicates that nitrogen doping in Czochralski silicon can restrain the generation of large size voids, The inner walls of voids also have an oxide film