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本文叙述用声光调 Q Nd:YAG 激光制造集成型 a-Si 太阳电池中的问题。在刻蚀 ITO 时,要注意掌握对应于 ITO 薄膜厚度的激光功率密度的阀值。用大于该阀值的激光功率进行刻蚀,可得到边缘平整,其中无淤积物,隔离电阻大于100kΩ 的刻槽。用 X 射线衍射和激光 Raman 谱确定了刻蚀区及其周围的晶化,二次谐波、波长为0.53μm 的激光束对 a-Si、a-SiC 的刻蚀是很有利的,因这些材料对波长0.53μm 的光的吸收系数较大,但必须提高倍频器的效率才能获得有足够功率密度的激光束。为减少集成型 a-Si 太阳电池的串联电阻,应选择适当的激光与样品的相对移动速率。对于金属背电极的选择刻蚀,为不损伤其下的 ITO 层,除控制激光功率密度外,选择短焦深的透镜并仔细调焦亦十分重要。
This article describes the problem of using acousto-optic Q-switched Nd: YAG lasers to manufacture integrated a-Si solar cells. When etching ITO, pay attention to mastering the threshold of the laser power density corresponding to the thickness of the ITO film. Etching with a laser power greater than this threshold gives a groove with flat edges, no deposits, and isolation resistance greater than 100 kΩ. X-ray diffraction and laser Raman spectroscopy confirmed that the etching and the surrounding crystallization, the second harmonic, the wavelength of 0.53μm laser beam a-Si, a-SiC etching is very beneficial because these The absorption coefficient of the material for light with a wavelength of 0.53 μm is large, but the efficiency of the frequency multiplier must be increased in order to obtain a laser beam with a sufficient power density. To reduce the series resistance of the integrated a-Si solar cell, the appropriate laser and sample relative velocity of movement should be chosen. For the selective etching of the metal back electrode, in order not to damage the underlying ITO layer, it is also very important to choose a lens with short depth of focus and careful focusing in addition to controlling the laser power density.