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基于非平衡格林函数(NEGF)的量子输运理论框架,对双栅MOSFET进行了二维实空间数值模拟。在对表征载流子电势的泊松方程自洽求解后,感兴趣的物理量(如亚阈值摆幅、漏致势垒下降、载流子密度、电流密度等)可以被求得,观察了由栅极注入效应导致的二维电荷分布,并对不同电介质材料对栅极漏电流的影响进行了研究。此外,还通过调整电介质参数并进行比较的方法,研究了电介质的有效质量、介电常数、导带偏移对栅极漏电流的影响。该模拟方法为双栅MOSFET中载流子自栅极的注入提供了良好的物理图景,对器件特性的分析和比较有助于栅氧层高k电介质材料的选取。
Based on the quantum transport theory framework of non-equilibrium Green’s function (NEGF), a two-dimensional real space numerical simulation of a dual-gate MOSFET is performed. After solving the Poisson equation characterizing the carrier potential, the physical quantities of interest (such as sub-threshold swing, leakage barrier drop, carrier density, current density, etc.) can be obtained. Gate charge effect caused by the two-dimensional charge distribution, and different dielectric materials on the gate leakage current were studied. In addition, by adjusting the dielectric parameters and compared to study the effective dielectric quality, dielectric constant, conduction band offset gate leakage current. The simulation method provides a good physical picture of the carrier injection from the gate in the dual-gate MOSFET. The analysis and comparison of the device characteristics is helpful for the selection of the gate-oxide high-k dielectric material.