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用俄歇电子能谱观察清洁InP表面在电子束照射下与真空室中H_2O和O_2的相互作用,发现水蒸汽所引起的电子束感应吸附氧的作用比氧气要明显得多。在吸附氧的同时,In和P的俄歇信号也发生变化,分析其过程为一种氧化过程,氧一开始先同表面的In结合成为氧化铟,随后向表面以内透入,并不断同In和P结合,氧化层的厚度随时间几乎是线性地增加的。与InP的自体氧化层的俄歇深度分布相比较,二者极为相似,所不同的是,电子束感应吸附的氧不足以使表面层中的磷全部氧化,而ESO的氧化层中磷的含量介于热氧化层与阳极氧化层之间。
Using Auger electron spectroscopy to observe the interaction of clean InP surface with H 2 O and O 2 in the vacuum chamber under electron beam irradiation, it was found that electron beam induced by water vapor adsorbed oxygen was much more effective than oxygen. While adsorbing oxygen, the Auger signal of In and P also changes. The process of the analysis is an oxidation process. At the beginning of oxygen, oxygen combines with In to form indium oxide, and then penetrates into the surface, In combination with P, the thickness of the oxide layer increases almost linearly with time. In contrast to the Auger depth profile of the InP self-oxide layer, the two are very similar except that the electron beam adsorbed by the electron beam is insufficient to oxidize all the phosphorus in the surface layer, whereas the phosphorus content in the ESO oxide layer Between the thermal oxide layer and the anodized layer.