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日本松下电器产业公司中央研究所研制出新的光集成电路用PLZT[(Pb,La)(Zr,Ti)O_3)薄膜电表材料,并用这种材料试制成“高效PTZT薄膜光转换开关”。PLZT材料及所制成的光转换开关是为适应光信息化系统的超高速化而研制的。其材料是利用成熟的高精度溅射工艺,和采用这种工艺的多组分PLZT单晶薄膜的外延技术制成的。由于它可以在兰宝石衬底上形成,加上介质波导通道转换开关以后,也能在同一衬底上集成硅、镓、砷等半导体元件成为光集成电路。使用PLZT薄膜材料制作的光转换关开的原理和结构如图1和图2所示。它是由材料上
Japan's Matsushita Electric Industrial Corporation Central Research Institute has developed a new optical integrated circuit with PLZT [(Pb, La) (Zr, Ti) O_3) Membrane meter materials, and use this material trial production of “high efficiency PTZT thin film optical switch.” PLZT materials and made of the light switch is to adapt to the optical information system developed ultra-high speed. The material is made using a proven high-precision sputtering process and the epitaxial technique of multicomponent PLZT single crystal thin films using this process. Because it can be formed on sapphire substrate, coupled with the dielectric waveguide channel switch, but also on the same substrate integrated silicon, gallium, arsenic and other semiconductor devices become integrated circuits. The principle and structure of photo-switching off using PLZT thin film material are shown in FIG. 1 and FIG. 2. It is made of material