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在蓝宝石上用MOCVD生长的材料制备了背入射Al0.42Ga0.58N/Al0.40Ga0.60N异质结p-i-n太阳光盲紫外探测器.从器件的正向I-V特性曲线计算了理想因子n与串联电阻RS分别为3和93Ω.器件在零偏压下275nm峰值波长处的外量子效率与探测率分别为9%和4.98×1011cm.Hz1/2/W,分析表明Al0.42Ga0.58N窗口层在275nm波长处的透过率仅为15.7%,是器件外量子效率和探测率偏低的原因之一.
A back-incident Al0.42Ga0.58N / Al0.40Ga0.60N heterojunction pin solar blind UV detector was fabricated on sapphire substrate by MOCVD.The forward IV characteristics of the device were used to calculate the ideal factor n and the series resistance RS were 3 and 93. External quantum efficiency and detection rate of the device at 275nm peak wavelength at zero bias were 9% and 4.98 × 1011cm.Hz1 / 2 / W, analysis shows that the Al0.42Ga0.58N window layer at 275nm The transmittance at the wavelength is only 15.7%, which is one of the reasons for the low quantum efficiency and detection rate outside the device.