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本文介绍了一种新的掺杂方法,使辉光放电制备的掺杂a-Si∶H不受氢化物的限制。 a-Si(p):H的红外吸收谱表明,Si-H在2000cm~(-1)处的吸收带随着掺杂浓度从p/Si=10~(-5)增至10~(-3)时是逐步减弱的;Si-H_2在2100cm~(-1)处的吸收带却不变化。氢热释谱的高温峰随掺杂浓度增加而减小,低温峰位置略有移动而大小保持不变。掺杂是在富硅相中进行的,磷占有了原来SiH中氢的位置。在p/Si>10~(-3)过掺杂情况下,由于pSi_3组态的形成,结构的破碎,氢逸出容易,非晶硅两相中氢含量都大大减少。 文中,根据Raman散射实验的结果,也讨论了磷在a-Si∶H中的掺杂机理。
In this paper, a new doping method is introduced to make a-Si: H doped by glow discharge without being limited by hydride. The infrared absorption spectrum of a-Si (p): H shows that the absorption band of Si-H at 2000cm -1 increases with the doping concentration from p / Si = 10 ~ (-5) to 10 ~ 3), the absorption band of Si-H 2 at 2100 cm -1 did not change. The high-temperature peak of the hydrogen-evolution spectrum decreases with the increase of the doping concentration, and the position of the low-temperature peak moves slightly while the size remains unchanged. Doping is performed in the silicon-rich phase, where phosphorus occupies the original hydrogen of SiH. In the case of p / Si> 10 ~ (-3) overdoping, due to the formation of the pSi_3 structure and the structural fragmentation, the hydrogen evolution is easy and the hydrogen content in both amorphous phases decreases greatly. According to the results of Raman scattering experiment, the doping mechanism of phosphorus in a-Si: H is also discussed.