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研究了MBE GaAs/AlGaAs多量子阱结构的横向光电流谱和光吸收谱。在光电流谱中观测到多种允许和禁戒的激子吸收峰以及一个阱中受主态至n=1电子态的非本征吸收峰。确定出5个空穴子带至2个电子子带的跃迁以及这些子带的间距。采用简单带方势阱模型并取参数Q_c=0.6,m_c=0.0665,m_h=0.45和m_l=0.12的计算结果与实验数据符合得相当好。将光吸收谱与光荧光谱进行了比较。
The lateral photocurrent and optical absorption spectra of the MBE GaAs / AlGaAs multiple quantum well structure are studied. A wide variety of admissible and forbidden exciton absorption peaks and extrinsic absorption peaks from acceptor to n = 1 electron states were observed in the photocurrent spectrum. The transitions of five hole subbands to two electron subbands and the spacing of these subbands are determined. Using the simple square-well model and taking the parameters Q_c = 0.6, m_c = 0.0665, m_h = 0.45 and m_l = 0.12, the calculated results are in good agreement with the experimental data. The light absorption spectrum and the fluorescence spectrum were compared.