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用二次离子质谱 (SIMS)分析了低能注入 (1 5 0 ke V)砷在体材料碲镉汞中的深度分布和注入砷原子在碲镉汞中的热扩散情况 .砷在碲镉汞中的分布表现出复杂的多元扩散机制 .在缺陷密度 (EPD)比较低的碲镉汞材料中 ,砷扩散的主体符合恒定扩散系数的有限源扩散模型 ,呈现出浓度随深度的高斯分布 .而在缺陷密度比较大的碲镉汞材料中 ,砷的分布呈多段指数型分布 ,表现出更复杂的多机制扩散特性
The depth distribution of low-energy implanted (1500 keV) arsenic in the bulk material HgCdTe and the thermal diffusion of the implanted arsenic in HgCdTe were analyzed by SIMS. , The complex diffuse mechanism is shown.In the HgCdTe materials with low defect density (EPD), the main body of arsenic diffusion complies with the finite source diffusion model with constant diffusion coefficient, which shows the Gaussian distribution with the depth In the HgCdTe materials with high defect densities, the distribution of arsenic shows a multi-stage exponential distribution, showing a more complex multi-mechanism diffusion characteristic