用电子束反应蒸发法制备的 ａ Ｓｉ∶ Ｈ 膜和 Ａｌ２ Ｏ３ 膜组成的 ａ Ｓｉ∶ Ｈ／ Ａｌ２ Ｏ３ 膜系，解决了 ａ Ｓｉ／ Ａｌ２ Ｏ３ 膜系在 ８０８ｎｍ 波长有较强光吸收问题，吸收系数从 ２×１０３ｃｍ － １ 降低到可以忽略的程度．ａ Ｓｉ∶ Ｈ 膜的光学带隙为 １７４ｅ Ｖ 左右．应用到 ８０８ｎｍ 大功率量子阱激光器腔面镀膜上，其器件光电性能获得较大改善 Si-H / Al 2 O 3 film made of a-Si: H film and Al 2 O 3 film prepared by electron beam evaporation has solved the problem that a-Si / Al 2 O 3 film has a strong absorption of light at a wavelength of 808 nm , The absorption coefficient decreased from 2 × 103cm - 1 to a negligible level. The optical band gap of a-Si: H film is about 1.74eV. Applied to the 808nm high-power quantum well laser cavity surface coating, the photoelectric properties of the device has been greatly improved