采用半经验色散公式分析了 L T- Ga As厚衬底共面微带传输线的 THz模式色散与切伦柯夫辐射损耗特性 ,同时计算了导体欧姆损耗和衬底介电损耗 .结果表明 ,较小的横向尺寸有利于改善 L T- Ga As共面微带传输线模式色散和辐射损耗特性 ,较大的横向尺寸比可降低导体欧姆损耗 The semi-empirical dispersion formula is used to analyze the THz mode dispersion and Cerenkov radiation loss characteristics of the L-GaAs thick-substrate coplanar microstrip transmission line. The ohmic loss of the conductor and the dielectric loss of the substrate are calculated. The small lateral dimension helps to improve the mode dispersion and radiation loss characteristics of the L-GaAs coplanar microstrip transmission line. The larger lateral dimension ratio can reduce the conductor ohmic loss