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本文报导了采用质子隔离和Si~+离子注入N~+接触层技术,提高了功率GaAa MESFET的微波性能和可靠性.已经制成栅长1μm,总栅宽600μm的GaAs功率MESFET,12GHz下最大输出功率210mW,经严格考核表明器件具有较高的可靠性.
This paper reports the improvement of microwave performance and reliability of GaAs GaAs MESFETs using proton isolation and Si + ion implantation.The GaAs power MESFET with gate length of 1μm and total gate width of 600μm has been fabricated, Output power 210mW, the strict assessment showed that the device has high reliability.