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综合报道了国内AgGaS_2晶体生长的研究进展。单相高纯的AgGaS_2多晶材料主要采用两温区气相输运温度振荡法和普通输运法合成。垂直Bridgman法是生长完整、大尺寸的AgGaS_2单晶体主要方法。其中又可分为籽晶定向法和三温区坩埚下降法。同时简单介绍了一种新型的合成生长一体化的生长方法。表明国内AgGaS_2晶体的生长工艺基本稳定有效,为进一步的器件制作和应用提供了保障。
Comprehensive report on the domestic research progress AgGaS 2 crystal growth. The single-phase high-purity AgGaS_2 polycrystalline material is mainly synthesized by two-temperature gas-phase transport temperature oscillation method and ordinary transport method. The vertical Bridgman method is the main method for growing a complete, large-size AgGaS_2 single crystal. Which can be divided into the orientation of the seed and the three temperature crucible drop method. At the same time, a brief introduction of a new synthetic growth and integration of growth methods. The results show that the growth process of AgGaS_2 crystals in China is basically stable and effective, which provides a guarantee for further device fabrication and application.