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本文研究了以TMG、固体In和固体As作为分子束源的碳掺杂In_xGa_(1-x)As(x=0-0.98)的MOMBE生长与特性,发现衬底温度和In分子束强度对样品的生长速率、In组分含量x及载流子浓度具有强烈影响。在x=0-0.8的范围内空穴浓度随x的增大而减小,当x>0.8时导电类型转变为n型。探讨了MOMBE法生长In_xGa_(1-x)As的掺碳机理及其对载流子浓度和导电类型的影响,并用X射线衍射(XRD)和光致发光谱(PL)等方法分析了外延层质量。
In this paper, the growth and characteristics of MOMBE doped with carbon-doped In_xGa_ (1-x) As (x = 0-0.98) with TMG, solid In and solid As as the molecular beam source were investigated. The growth rate, the In content x and the carrier concentration have a strong influence. The hole concentration decreases with the increase of x in the range of x = 0-0.8, and changes to n-type when x> 0.8. The mechanism of carbon doping in In_xGa_ (1-x) As grown by the MOMBE method and its effect on the carrier concentration and conductivity were discussed. The quality of the epitaxial layer was analyzed by X-ray diffraction (XRD) and photoluminescence (PL) .