采用简易多晶硅隔离方法制造集成稳压源是新的试验。本文就试验过程中为选择外延提供多晶核心的氧化膜,单、多晶同时淀积的质量控制等问题作了重点讨论。从新工艺取得的一些初步结果可以看出为解决目前单片功率集成电路制备困难而取用这种工艺的可能和价值。 The use of simple polysilicon isolation method to create integrated voltage regulator is a new test. In this paper, we mainly discuss the problems of the oxide film, the quality control of single and polycrystalline simultaneous deposition, which provide polycrystalline core for selective epitaxy. Some preliminary results obtained from the new process can be seen to solve the current monolithic power integrated circuit manufacturing difficulties and access to the possibility and value of this process.