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美国《电子学》杂志刊登了以目前提高大规模集成电路性能五项技术和各公司的计划情况。五项技术分别是:短沟道 MOS(英特尔公司称之为“HMOS”)。Ⅴ型槽双扩散MOS(VMOS):平面双扩散 MOS(DMOS 或 SAMOS),兰宝石——硅(SOS),集成注入逻辑(1~2L)。本文列举了各项技术的特点及其利弊。后而各篇论文就 HMOS、VMOS、1~2L(略)分别加以论述。
The United States, “Electronics” magazine published in the current performance of large-scale integrated circuits to improve the five technologies and the company's plan. The five technologies are: Short-channel MOS (what Intel calls “HMOS”). Ⅴ-slot double diffusion MOS (VMOS): planar double diffused MOS (DMOS or SAMOS), sapphire-silicon (SOS), integrated injection logic (1-2L). This article lists the characteristics of each technology and its advantages and disadvantages. After all the papers on the HMOS, VMOS, 1 ~ 2L (slightly) were discussed.