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在有效质量近似下,运用变分方法,考虑内建电场(BEF)效应和量子点的三维约束效应,研究了纤锌矿结构的InxGa1-xN/GaN柱形量子点中类氢杂质态结合能随量子点的结构参数(高度、半径)I、n组分和杂质位置的变化规律。结果表明:类氢杂质位于量子点中心时,杂质态结合能随量子点高度的增加先增大后减小,存在最大值;随量子点半径增大而减小;而随着In组分的增加,杂质态结合能增大;杂质从量子点下界面沿z轴移至上界面过程中,杂质态结合能增大;量子点内外材料的电子有效质量的失配使杂质态结合能减小。
In the approximation of effective mass, the variational method, considering the built-in electric field (BEF) effect and the three-dimensional constrained effect of quantum dots, were used to study the binding energy of hydrogen-like impurity states in InxGa1-xN / GaN wurtzite wurtzite With the quantum dot structure parameters (height, radius) I, n components and impurity position changes. The results show that when the hydrogen-like impurity is located at the center of the quantum dot, the binding energy of the impurity states first increases and then decreases with the increase of the quantum dot height, and there exists the maximum value, which decreases as the radius of the quantum dot increases. When the impurity moves from the lower QD interface to the upper interface along the z axis, the binding energy of the impurity states increases. The mismatch of the effective electron mass of the inner and outer QDs reduces the binding energy of the impurity states.