本文数字模拟了磁场中的半导体器件,计算了硅片的二维电势、电子和空穴浓度分布,把著名的Scharfetter-Gummel法推广到二维、非零磁场,且应用了有限差分技术。我们的结论支持霍尔片较早的结论。在本征的或严格的本征硅中,有磁集束和空间电荷效应,作为磁传感器,我们模拟了分裂接触的p~+-i-n~-硅二极管。 In this paper, we simulate the semiconductor devices in the magnetic field and calculate the two-dimensional potential, electron and hole concentration distributions of the silicon wafer. The famous Scharfetter-Gummel method is extended to two-dimensional and non-zero magnetic fields and the finite difference technique is applied. Our conclusion supports the earlier conclusion of the Hall film. In intrinsic or strict intrinsic silicon, there is magnetic confinement and space charge effect. As a magnetic sensor, we simulate a split-contact p ~ + -i-n ~ -silicon diode.