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本文讨论了一种用(?)大型和小型计算机的65635位×1字的动态随机存储器,工作于单-5伏电源,器件(16脚)和TTL完全相容。并可接受-1V到+7V的直流输入电平,瞬时交流时可超过此限度。系统的接地端用作V_(SS)电源和衬底偏置。该RAM具有100～150ns的存取时间,在周期时间为250ns时,最坏情况下的功耗小于200mw。 器件面积小于35000平方密耳。存储单元被恰当地排列成256行(读出放大器)和256列的阵列。
This article discusses a 65635 by 1 word DRAM using (?) Large and small computers, operating on a single -5V supply, and the device (16-pin) fully compatible with TTL. And can accept -1V to + 7V DC input level, instantaneous exchange can exceed this limit. The system ground is used as the V_ (SS) power and substrate bias. The RAM has 100 ~ 150ns access time, the cycle time of 250ns, the worst case power consumption is less than 200mw. Device area of less than 35,000 square mil. The memory cells are properly arranged in 256 rows (sense amplifiers) and 256 columns of arrays.