本文报道了用喇曼背散射对非晶半导体调制结构材料的研究.从TO峰的展宽和位移可得到相应材料的键角偏移及微晶晶粒尺度的计算,并着重研究了调制结构的喇曼谱,得到了一些明确的、有意义的结论,为进一步研究这类材料的结构提供了信息. In this paper, the Raman backscattering of amorphous semiconductor modulation structure of materials studied from the TO peak broadening and displacement can be derived from the corresponding material bond angle deviation and the calculation of the crystallite size, and focused on the modulation structure The Raman spectrum obtained some definite and meaningful conclusions, which provided the information for further studying the structure of such materials.