欧盟项目组HiPoSwitch,成功研发了一款快速高效增强型氮化镓功率开关。单一器件晶体管仅4.5×2.5mm2,经过优化可应用于600V条件下,导通电阻75mΩ,最大电流120A。晶体管成品最终由英飞凌公司在马来西亚的生产线上进行低感应ThinkPAD外壳封装。比利时公司EpiGaN和Aixtron都已将研究方向由外延转向以硅作为外延生长的衬底,衬底制造成本因此降低为原来的十分之一。同时晶片直径增长至6英寸,甚至可达8英寸,而这是实现节省成本的工业生产的必要步骤,向实现批量工业生产的目标前进不少。 HiPoSwitch, the EU project team, successfully developed a fast and efficient enhanced GaN power switch. A single device transistor only 4.5 × 2.5mm2, optimized for 600V conditions, on-resistance 75mΩ, the maximum current of 120A. Transistor finished products by Infineon in Malaysia in the final production line low-inductance ThinkPAD housing. Both Belgian companies EpiGaN and Aixtron have shifted their research from epitaxial to silicon-based epitaxial substrates, reducing substrate manufacturing costs by one-tenth. At the same time, the chip diameter increased to 6 inches and even up to 8 inches, which is a necessary step toward cost-saving industrial production and has achieved many goals of mass production.