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针对先进半导体器件在失效分析过程中遇到的实际问题,介绍了两种优化的透射电镜(TEM)样品制备方法,两种方法均使用了聚焦离子束(FIB)设备完成。详细描述了两种制备方法的改善步骤以及改善后的效果。一种方法是通过增加碳的覆盖层来避免TEM图像重影问题;另外一个方法是利用FIB的不同角度切割能力,来制备定点的平面TEM样品。实践证明,通过FIB样品制备方法的优化和改善,解决了45 nm工艺及以下制程的半导体器件失效分析过程中遇到的此类问题,TEM样品质量能得到有效的改善,对于解决实际工作中的问题非常有效。
In order to solve the practical problems encountered in the failure analysis of advanced semiconductor devices, two optimized methods of TEM (Transmission Electron Microscopy) sample preparation are introduced. Both of these methods are performed by FIB (Focused Ion Beam). Described in detail the two steps to improve the preparation method and the improved results. One approach is to avoid the problem of TEM image ghosting by increasing the carbon overlay; another approach is to make fixed-point, planar TEM samples using different angle cutting capabilities of the FIB. Practice has proved that through the FIB sample preparation method optimization and improvement to solve the 45 nm process and the following process semiconductor device failure analysis process encountered such problems, TEM sample quality can be effectively improved, to solve the practical work The problem is very effective.