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运用光束传播法对硅交叉波导全内反射光开关中的光学效应进行了详细分析。结果表明：１）光学表面衰减波和泄漏波所引发的光遂道效应对开关特性有重要影响；２）反射端光功率的相对大小与反射区界面位置密切相关，其起因是古斯－汉欣（Ｇｏｏｓ－Ｈａｅｎｓｃｈｅｎ）位移；３）合理考虑这些因素的影响可以大大降低器件对折射率变化的要求。
The optical effect of the cross-waveguide TIR switch in silicon was analyzed in detail by using the beam propagation method. The results show that: 1) the optical tunneling effect caused by the optical surface attenuation wave and leakage wave has an important influence on the switching characteristics; 2) the relative optical power at the reflection end is closely related to the location of the reflection zone interface, (Goos-Haenschen) displacement; 3) Reasonable consideration of the influence of these factors can greatly reduce the device’s refractive index change requirements.