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用扰动γγ角关联方法研究了低指数Ni单晶衬底与外延生长In膜界面的互扩散和界面化合物的形成。与Ni/In薄膜系统的结果进行了比较.除观察到相图中已知的全部Ni/In化合物外,发现了一个新的Ni/In化合物.相出现的次序都是从富In相到富Ni相.单晶衬底情况下,相形成与In膜厚度及衬底取向有关.
Interdiffusion and interfacial compound formation at the interfacial interface between the low index Ni single crystal substrate and the epitaxial growth In film were investigated by the perturbed γ / γ correlation method. In comparison with the results of the Ni / In thin film system, a new Ni / In compound was found besides all the known Ni / In compounds in the phase diagram.The order of occurrence was from the In-rich to the Wealth Ni phase. In the case of a single crystal substrate, the phase formation is related to the thickness of the In film and the orientation of the substrate.