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采用微细的电子束通过化学腐蚀工艺而不是剥离工艺制得了亚微米线宽的铬掩模。在计算机控制的扫描电镜(SEM)中进行电子束曝光。用旋转涂敷法在铬版上涂上聚甲基丙烯酸甲酯(PMMA)抗蚀剂,电子辐照之后,样品用适当的工艺进行显影,对铬版曝光区域进行化学腐蚀。在曝光中,电子束的能量、电流和直径分别为15千电子伏、0.1毫微安和小于0.1微米、无需后烘工序。利用这些技术制得了表面波换能器和集成电路的铬掩模。
Submicron linewidth chrome masks are fabricated using a fine beam of electrons through a chemical etching process rather than a lift-off process. Electron beam exposure was performed in a computer controlled scanning electron microscope (SEM). Polymeric methyl methacrylate (PMMA) resist was coated on a chrome plate by spin coating. After electron irradiation, the sample was developed using a suitable process to chemically etch the exposed area of the chrome plate. During exposure, the energy, current and diameter of the electron beam are 15 keV, 0.1 nanoamperes and less than 0.1 micrometres, respectively, without the need for a post-baking procedure. Chromium masks for surface wave transducers and integrated circuits were fabricated using these techniques.