报道了具有最高单位电流增益截止频率(f_T)的Si异质结双极晶体管(HBT)的制作。器件的f_T值达75GHz,集电极-基极偏压1V,本征基区层电阻(R_(bi))17kΩ/□,发射极宽0.9μm。该器件用SiGe作基底材料,采用多发射极双极工艺制作,其75GHz的性能指标几乎比Si双极晶体管的速度提高一倍。45nm基区中的Ge是缓变的,这样就产生了约为20kV/cm的漂移电场,因而本征渡越时间仅为1.9ps。 The fabrication of Si heterojunction bipolar transistor (HBT) with the highest unit current gain cut-off frequency (f_T) was reported. The f_T value of the device reaches 75GHz, the collector-base bias voltage is 1V, the intrinsic base layer resistance (R bi) is 17kΩ / □, and the emitter width is 0.9μm. The device uses SiGe as a base material and is fabricated using a multi-emitter bipolar process. Its 75GHz performance is almost double the speed of Si bipolar transistors. The Ge in the 45 nm base region is gradual, resulting in a drift electric field of about 20 kV / cm, so the intrinsic transit time is only 1.9 ps.