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本文在分析淬火固态再结晶(CR)工艺生长碲镉汞(MCT)晶体原理基础上,研究了 CR 工艺生长 MCT 晶体有关步骤,改进了合成、淬火及再结晶工艺。合成时采用混合温度分布方式简化了升温及合成炉摆动工艺;淬火时在反应管内加石墨塞子改善了晶体组分均匀性;再结晶时采用温度梯度退火提高了再结晶效率。对改进工艺生长的 MCT(x=0.2)晶体组分均匀性、结构完整性、光学和电学性质进行了分析,结果表明晶体质量有明显提高。
Based on the analysis of the principle of the crystal growth of HgCdTe (MCC) by the solid state recrystallization (CR) process, the relevant steps of growing the MCT crystal by the CR process were studied, and the synthesis, quenching and recrystallization processes were improved. The mixed temperature distribution is used to simplify the process of heating up and swinging of the synthesizer furnace. Adding graphite plugs in the reactor during quenching can improve the uniformity of the crystal components. The recrystallization efficiency is improved by temperature gradient annealing during recrystallization. The homogeneity, structural integrity, optical and electrical properties of the MCT (x = 0.2) crystal that improve the process growth were analyzed and the results showed that the crystal quality was significantly improved.