论文部分内容阅读
InGaAs’InP结型场效应晶体管首次达到了260mS/mm的极高跨导,制作工艺采用能够获得亚微米栅(0.5μm)的化学腐蚀技术。利用自对准工艺,得到了极低的通道电阻。
For the first time, the InGaAs’InP junction field effect transistor reached a very high transconductance of 260 mS / mm using a chemical etching technique that achieves a sub-micron gate (0.5 μm). Using self-aligned technology, very low channel resistance is achieved.