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[期刊论文] 作者：Zhi-Yuan Hu,Zheng-Xuan Zhang,Bing-Xu Ning,Da-Wei Bi,
来源：中国物理B（英文版） 年份：2017
Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator (PDSOI) NMOSFETs with the bodies floating were...
,Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench iso
[期刊论文] 作者：Meng-Ying Zhang,Zhi-Yuan Hu,Da-Wei Bi,Li-Hua Dai,Zheng-Xuan Zhang,
来源：中国物理B（英文版） 年份：2018
Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays,in 0.13-μm partially-depleted silicon-on-insulator (PD...
[期刊论文] 作者：Xin Xie,Da-Wei Bi,Zhi-Yuan Hu,Hui-Long Zhu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOS-FET is comprehensively studied. We find tha...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zhi-Yuan Hu,Xiao-Nian Liu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zheng-Xuan Zhang,Xin Xie,Zhi-Yuan Hu,Hui-Xiang Huang,Shi-Chang Zou,
来源：中国物理快报（英文版） 年份：2018
We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator (SO...
,Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Inte
[期刊论文] 作者：Le-Qing Zhang,Jian Lu,Jia-Ling Xu,Xiao-Nian Liu,Li-Hua Dai,Yi-Ran Xu,Da-Wei Bi,Zheng-Xuan Zhang,
来源：中国物理快报（英文版） 年份：2017
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130hm CMOS bulk Si and silicon-on-insulator (SO1) tec...
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