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[会议论文] 作者：Ming Liu,Qi Liu,Shibing Long,Hangbing Lv,
来源：International Conference on Nanoscience & Technology,China 2 年份：2013
Resistive switching memory (RRAM) based on a solid-elelctrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory,analog circuits and neuromorphic application.A...
Characteristics and Mechanism of Multimode Resistive Switching Behaviors in the Oxide-electrolyte-ba
[会议论文] 作者：Ming Liu,Qi Liu,Haitao Sun,Shibing Long,Hangbing Lv,
来源：The 6th International Conference on Nanoscience and Technolo 年份：2015
Resistive switching (RS) phenomenon induced by redox in oxide electrolyte shows fascinating prospects for potential applications in resistance random access memory (RRAM), analog circuits and neuromor...
Microscopic Origin of Transition from Threshold Switching to Memory Switching in Oxide-electrolyte-b
[会议论文] 作者：Ming Liu,Qi Liu,Haitao Sun,Congfei Li,Hangbing Lv,Shibing Long,
来源：2013年纳米、表面和Graphene科学与技术全国会议 年份：2013
Resistive switching phenomenon based on the redox-induced conductivity change in some solid-elelctrolyte insulator attracts considrable interest as a new techno...
[期刊论文] 作者：Nianduan Lu,Pengxiao Sun,Ling Li,Qi Liu,Shibing Long,Hangbing Lv,Ming Liu,
来源：中国物理B（英文版） 年份：2016
...
Modulation of Microstructure and Charge Transport in Polymer Monolayer Transistors by Solution Aging
[期刊论文] 作者：Xuemei Lin,Ruochen Liu,Chenming Ding,Junyang Deng,Yifu Guo,Shibing Long,Ling Li,Mengmeng Li,
来源：中国化学（英文版） 年份：2021
A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge transport.In this report,the 2-nm-thick polymer monolayers based on......
A unified hybrid compact model of β-Ga2Oa Schottky barrier diodes for mixer and rectifier applicatio
[期刊论文] 作者：Qiming HE,Guangzhong JIAN,Guangwei XU,Feihong WU,Yao LI,Zhuangzhuang HU,Qian FENG,Xiaolong ZHAO,Shibing LONG,
来源：中国科学：信息科学（英文版） 年份：2021
Dear editor,rnβ-gallium oxide (β-Ga2O3) was proposed as a new candi-date for next-generation power devices in 2010[1].When applied in unipolar power devices,it is superior to SiC and GaN because of preferable material properties[2].Power ......
[期刊论文] 作者：Yuan Qin,Shibing Long,Hang Dong,Qiming He,Guangzhong Jian,Ying Zhang,Xiaohu Hou,Pengju Tan,Zhongfang,
来源：中国物理B（英文版） 年份：2019
Ultraviolet (UV) photodetectors (PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its...
[期刊论文] 作者：Jing Liu,Xiaoxin Xu,Chuanbing Chen,Tiancheng Gong,Zhaoan Yu,Qing Luo,Peng Yuan,Danian Dong,Qi Liu,Shibing Long,
来源：中国物理B（英文版） 年份：2018
The tail bits of intermediate resistance states (IRSs) achieved in the SET process (IRSs) and the RESET process (IRSR) of conductive-bridge random-access memory...
Fully Printed High?Performance n?Type Metal Oxide Thin?Film Transistors Utilizing Coffee?Ring Effect
[期刊论文] 作者：Kun Liang,Dingwei Li,Huihui Ren,Momo Zhao,Hong Wang,Mengfan Ding,Guangwei Xu,Xiaolong Zhao,Shibing Long,
来源：纳微快报:英文版 年份：2021
Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from vacuum-based methods due ......
,Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnet
[期刊论文] 作者：Yu Wu,Longxiang Xu,Yan Gong,Yunbo Ou,Yang Liu,Leilei Li,Yu Yan,Gang Han,Dongwei Wang,Lihua Wang,Shibing Long,
来源：中国物理快报（英文版） 年份：2020
Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit couplin...
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