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[期刊论文] 作者：Shengping SHI,Xiaorong LUO,Hon,
来源：亚洲农业研究：英文版 年份：2014
Financial distribution to compensate grain production reflects governmental macro-control on grain production and supply. With the reference of agricultural bas...
[期刊论文] 作者：Xiaorong Luo,Ke Zhang,Xu Song,,
来源：半导体学报:英文版 年份：2020
A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper.The device features an integrated Schottky barrier diode and an L-shaped...
[期刊论文] 作者：Xiaorong Luo,Tian Liao,Jie Wei,
来源：半导体学报:英文版 年份：2019
A new ultralow gate–drain charge(QGD) 4 H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shie...
[期刊论文] 作者：Xiaorong Luo,Tian Liao,Jie Wei,
来源：城市道桥与防洪 年份：2019
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：Xiaorong Luo,Guy Vasseur,贺向阳,,
来源：国外油气勘探 年份：1997
自从二十世纪五十年代开始,烃类生成被认为是最重要的异常压力机制之一。烃类生成影响孔隙—压力演化:(1)通过固体干酪根向液态或气态烃类的转化增加孔隙流体的体积;(2)由于...
[期刊论文] 作者：Chenxia Wang,Jie Wei,Diao Fan,Yang Yang,Xiaorong Luo,
来源：半导体学报（英文版） 年份：2020
A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed de...
A Quantitative Method for Characterizing Transport Capability of Compound Hydrocarbon Carrier System
[期刊论文] 作者：Yuhong Lei,Xiaorong Luo,Likuan Zhang,Ming Cheng,Chengpeng Song,
来源：黑龙江科技信息 年份：2013
本文通过对荣华二采区10...
Impact of chlorites on the wettability of tight oil sandstone reservoirs in the Upper Triassic Yanch
[期刊论文] 作者：Zhongnan WANG,Xiaorong LUO,Keyu LIU,Yuchen FAN,Xiangzeng WANG,
来源：中国科学：地球科学（英文版） 年份：2021
Wettability is an essential property of reservoirs that is of great importance for enhancing oil recovery (EOR) and oil migration.The wettability of reservoirs is generally believed to be strongly affected by mineral compositions but it is ......
[期刊论文] 作者：Xiaorong Luo,Ke Zhang,Xu Song,Jian Fang,Fei Yang,Bo Zhang,
来源：半导体学报（英文版） 年份：2020
A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper.The device features an integrated Schottky barrier diode and an L-shaped...
[期刊论文] 作者：Jiayun XIONG,Chao YANG,Jie WEI,Junfeng WU,Bo ZHANG,Xiaorong LUO,,
来源：Science China(Information Sciences) 年份：2016
A novel reduced surface field (RESURF) Al GaN /GaN high electron mobility transistor(HEMT)with charged buffer layer is proposed. Its breakdown mechanism and on-...
[会议论文] 作者：Chao Yang,Jiayun Xiong,Jie Wei,Junfeng Wu,Fu Peng,Bo Zhang,Xiaorong Luo,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
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