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,Comparative study of different properties of GaN films grown on(0001)sapphire using high and low te
[期刊论文] 作者：Xue Jun-Shuai,Hao Yue,Zhang Jin-Cheng,Ni Jin-Yu, 来源：中国物理B（英文版） 年份：2010
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,Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys
[期刊论文] 作者：Zhao Yi,Zhang Jin-Cheng,Xue Jun-Shuai,Zhou Xiao-Wei,Xu Sheng-Rui,Hao Yue, 来源：中国物理B（英文版） 年份：2015
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,Improvement in a-plane GaN crystalline quality using wet etching method
[期刊论文] 作者：Cao Rong-Tao,Xu Sheng-Rui,Zhang Jin-Cheng,Zhao Yi,Xue Jun-Shuai,Ha Wei,Zhang Shuai, 来源：中国物理B（英文版） 年份：2014
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,Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility tr
[期刊论文] 作者：Zhang Peng,Zhao Sheng-Lei,Xue Jun-Shuai,Zhu Jie-Jie,Ma Xiao-Hua,Zhang Jin-Cheng,Hao Yue, 来源：中国物理B（英文版） 年份：2015
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,Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer gro
[期刊论文] 作者：Li Liang,Yang Lin-An,Xue Jun-Shuai,Cao Rong-Tao,Xu Sheng-Rui,Zhang Jin-Cheng,Hao Yue, 来源：中国物理B（英文版） 年份：2014
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,Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
[期刊论文] 作者：Zhang Wei,Xue Jun-Shuai,Zhou Xiao-Wei,Zhang Yue,Liu Zi-Yang,Zhang Jin-Cheng,Hao Yue, 来源：中国物理B（英文版） 年份：2012
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,Trap States in Al2Oa InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conducta
[期刊论文] 作者：ZHANG Peng,ZHAO Sheng-Lei,XUE Jun-Shuai,ZHANG Kai,MA Xiao-Hua,ZHANG Jin-Cheng,HAO Yue, 来源：中国物理快报（英文版） 年份：2014
We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAIN/GaN high electron mobility transistors grown by pulsed metal organic ch...
,Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN
[期刊论文] 作者：Du Da-Chao,Zhang Jin-Cheng,Ou Xin-Xiu,Wang Hao,Chen Ke,Xue Jun-Shuai,Xu Sheng-Rui,Hao Yue, 来源：中国物理B（英文版） 年份：2011
...
,Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the tra
[期刊论文] 作者：Liu Zi-Yang,Zhang Jin-Cheng,Duan Huan-Tao,Xue Jun-Shuai,Lin Zhi-Yu,Ma Jun-Cai,Xue Xiao-Yong,Hao Yue, 来源：中国物理B（英文版） 年份：2011
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,Neutron irradiation effects on AlGaN/GaN high electron mobility transistors
[期刊论文] 作者：Lü Ling,Zhang Jin-Cheng,Xue Jun-Shuai,Ma Xiao-Hua,Zhang Wei,Bi Zhi-Wei,Zhang Yue,Hao Yue, 来源：中国物理B（英文版） 年份：2012
...
,Temperature dependences of Raman scattering in different types of GaN epilayers
[期刊论文] 作者：Xue Xiao-Yong,Xu Sheng-Rui,Zhang Jin-Cheng,Lin Zhi-Yu,Ma Jun-Cai,Liu Zi-Yang,Xue Jun-Shuai,Hao Yue, 来源：中国物理B（英文版） 年份：2012
...
,Development and characteristic analysis of a field-plated A12O3/AlInN/GaN MOS-HEMT
[期刊论文] 作者：Mao Wei,Yang Cui,Hao Yao,Zhang Jin-Cheng,Liu Hong-Xia,Bi Zhi-Wei,Xu Sheng-Rui,Xue Jun-Shuai,Ma Xiao-Hua, 来源：中国物理B（英文版） 年份：2011
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,Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited A
[期刊论文] 作者：MAO Wei,ZHANG Jin-Cheng,XUE Jun-Shuai,HAO Yao,MA Xiao-Hua,WANG Chong,LIU Hong-Xia,XU Sheng-Rui,YANG Lin-An, 来源：中国物理快报(英文版) 年份：2010
Al0.85In0.15N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOS-HEMTs)employing a 3-nm ultra-thin atomic-layer deposited(ALD)Al2O3 gate d...
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