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,Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial sil
[期刊论文] 作者:Duan Bao-Xing,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2012
...
[期刊论文] 作者:Yang Yin-Tang,Han Ru,Wang-Ping,
来源:中国物理B(英文版) 年份:2008
This paper employs micro-Raman technique for detailed analysis of the defects(both inside and outside)in bulk 4H-SiC.The main peaks of the first-order Raman spe...
[期刊论文] 作者:丁尧舜,DONG Gang,YANG Yin-tang,,
来源:Journal of Chongqing University(English Edition) 年份:2014
To realize equal power splitting at two arbitrary gigahertz-frequencies, this paper presents a new type of Wilkinson dual frequency power divider, consisting of...
[期刊论文] 作者:Zhu Zhang-Ming,Xiu Li-Ping,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2010
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[期刊论文] 作者:Zhu Zhang-Ming,Qian Li-Bo,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2009
Repeater optimization is the key for SOC (System on Chip) interconnect delay design. This paper proposes a novel optimal model for minimizing power and area ove...
,The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with
[期刊论文] 作者:Liu Li,Yang Yin-Tang,Ma Xiao-Hua,
来源:中国物理B(英文版) 年份:2011
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[期刊论文] 作者:Qian Li-Bo,Zhu Zhang-Ming,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2011
...
,Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail sta
[期刊论文] 作者:Gao Hai-Xia,Hu Rong,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2011
...
,The Theoretical Investigation and Analysis of High-Performance ZnO Double-Gate Double-Layer Insulat
[期刊论文] 作者:GAO Hai-Xia,HU Rong,YANG Yin-Tang,
来源:中国物理快报(英文版) 年份:2012
A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance.Compared with the conven...
[期刊论文] 作者:曹寒梅,YANG Yin-tang,蔡伟,LU Tie-ju,
来源:西安电子科技大学学报(自然科学版) 年份:2004
提出了一种结构简单新颖的高性能曲率补偿带隙电压基准源.电路设计中没有采用典型结构中的差分放大器,而是采用负反馈技术实现电压箝位,简化了电路结构;输出部分呆用调节型共...
[期刊论文] 作者:Hao Wu,Bao-Xing Duan,Luo-Yun Yang,Yin-Tang Yang,
来源:中国物理B(英文版) 年份:2019
In this paper, we propose a two-dimensional (2D) analytic model for the channel potential and electric field distribution of the RESURF AlGaN/GaN high electron...
[期刊论文] 作者:LU Qi-Jun,ZHU Zhang-Ming,YANG Yin-Tang,DING Rui-Xue,
来源:中国物理快报(英文版) 年份:2015
...
,A novel analytical thermal model for multilevel nano-scale interconnects considering the via effect
[期刊论文] 作者:Zhu Zhang-Ming,Li Ru,Hao Bao-Tian,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2009
...
[期刊论文] 作者:Dong Gang,Yang Yang,Chai Chang-Chun,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2010
As feature size keeps scaling down, process variations can dramatically reduce the accuracy in the estimation of interconnect performance. This paper proposes a...
[期刊论文] 作者:Zhu Zhang-Ming,wan Da-Jing,Yang Yin-Tang,En Yun-Fei,
来源:中国物理B(英文版) 年份:2011
...
[期刊论文] 作者:Zhu Zhang-Ming,Hao Bao-Tian,Yang Yin-Tang,Li Yue-Jin,
来源:中国物理B(英文版) 年份:2010
...
[期刊论文] 作者:Dong Gang,Shi Tao,Zhao Ying-Bo,Yang Yin-Tang,
来源:中国物理B(英文版) 年份:2015
...
[期刊论文] 作者:ZHAO Jian,HUANG Yu,YANG Yin-tang,GAO Ren-jing,
来源:中南大学学报(英文版) 年份:2012
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,Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-Si
[期刊论文] 作者:CHEN Bin,YANG Yin-Tang,CHAI Chang-Chun,ZHANG Xian-Jun,
来源:中国物理快报(英文版) 年份:2011
A model of novel triangular electrode metal-semiconductor-metal (TEMSM) and conventional electrode metal- semiconductor-metal (CEMSM) detectors is established b...
,An Analytical Model of SiGe Heterojunction Bipolar Transistors on SOI Substrate for Large Current S
[期刊论文] 作者:XU Xiao-Bo,ZHANG Bin,YANG Yin-Tang,LI Yue-Jin,
来源:中国物理快报(英文版) 年份:2013
Recently,silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) have been demonstrated with transit frequencies above 350GHz at 300 K and above 500...
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