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[期刊论文] 作者：Zongwei Xu,Yidan Tang,Mathias,
来源：纳米技术与精密工程(英文) 年份：2020
The development of new kinds of semiconductor material is a very attractive topic of scientific research and appliations.Graphene is considered as one of the mo...
[期刊论文] 作者：Ying Song,Zongwei Xu,Andreas R,
来源：纳米技术与精密工程(英文) 年份：2019
Annealing nanodiamonds(ND)at high temperatures up to 1700°C is a common method to synthesize carbon onions.The transformation from NDs to carbon onions is...
Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by
[期刊论文] 作者：Jiayu Liu,Zongwei Xu,Ying Song,
来源：纳米技术与精密工程(英文) 年份：2020
Silicon-vacancy(VSi)centers in silicon carbide(SiC)are expected to serve as solid qubits,which can be used in quantum computing and sensing.As a new controllabl...
Foreword to the special issue on wide-bandgap (WBG) semiconductors:from fundamentals to applications
[期刊论文] 作者：Zongwei Xu,Yidan Tang,Mathias Rommel,
来源：纳米技术与精密工程（英文） 年份：2020
The development of new kinds of semiconductor material is a very attractive topic of scientific research and appliations. Graphene is con-sidered as one of the...
Molecular dynamics simulation on the effect of dislocation structures on the retention and distribut
[期刊论文] 作者：Li Ji,Lei Liu,Zongwei Xu,Ying,
来源：纳米技术与精密工程(英文) 年份：2020
To investigate the effect of dislocation structures on the initial formation stage of helium bubbles, molecular dynamics(MD) simulations were used in this study...
[期刊论文] 作者：Ying Song,Zongwei Xu,Andreas Rosenkranz,Mathias Rommel,Changkun Shi,Fengzhou Fang,
来源：纳米技术与精密工程 年份：2019
Annealing nanodiamonds (ND) at high temperatures up to 1700 °C is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is...
Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
[期刊论文] 作者：Xiuhong Wang,Junlei Zhao,Zongwei Xu,Flyura Djurabekova,Mathias Rommel,Ying Song,Fengzhou Fang,
来源：纳米技术与精密工程（英文） 年份：2020
As a promising material for quantum technology, silicon carbide (SiC) has attracted great interest in materials sci-ence. Carbon vacancy is a dominant defect in...
Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman
[期刊论文] 作者：Zengqi Zhang,Zongwei Xu,Ying Song,Tao Liu,Bing Dong,Jiayu Liu,Hong Wang,
来源：纳米技术与精密工程(英文) 年份：2021
As an important wide-bandgap semiconductor,gallium nitride(GaN)has attracted considerable attention.This paper describes the use of confocal Raman spectroscopy...
[期刊论文] 作者：Zhixiang Tao,Wei Zhao,Shang Wang,Boyu Zhao,Rushuai Hua,Ji Qin,Zongwei Xu,
来源：纳米技术与精密工程（英文版） 年份：2021
Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular struc-ture.It also has a number of practical applications in evaluating food safety,medicine,and forensics.The Rama......
Electron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-
[期刊论文] 作者：Xiuhong Wang,Zongwei Xu,Mathias Rommel,Bing Dong,Le Song,Clarence Augustine TH Tee,Fengzhou Fang,
来源：纳米技术与精密工程（英文） 年份：2019
Deep-level defects in silicon carbide (SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminu...
Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by
[期刊论文] 作者：Jiayu Liu,Zongwei Xu,Ying Song,Hong Wang,Bing Dong,Shaobei Li,Jia Ren,Qiang Li,Mathias Rommel,Xinhua,
来源：纳米技术与精密工程（英文） 年份：2020
Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new contr...
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