NTD-Si相关论文
,Conceptual design of irradiation device for silicon neutron transmutation doping around Es-Salam re
Silicon neutron transmutation doping remains one of the most viable nuclear applications for research reactors.Providing......
本文报导了关于高阻N型区熔NTD-Si-P^+N结二极管经电子辐照后的等温退火特性,获得5个缺陷能级:E1=0.16eV,E2=0。.27eV,E3=0.31eV,E4=0.37eV6和E5=0.42eV,结果表明E3和R4有比其它3个能极更好的热稳定性。......
评述了30年前第一批用中子嬗变掺杂硅单晶(即无条纹硅)制造高电压、大电流整流管和晶闸管的报道。由此介绍硅材料的中子嬗变掺杂技......
Conceptual design of irradiation device for silicon neutron transmutation doping around Es-Salam res
Silicon neutron transmutation doping remains one of the most viable nuclear applications for research reactors.Providing......