One-port surface acoustic wave resonators (SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film s......

该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......

对液封直拉(LEC)非掺磷化铟(InP)进行930℃ 80h的退火可重复制备直径为50和75mm的半绝缘 (SI)衬底.退火是在密封的石英管内纯磷(PP......

This paper describes an experimental and theoretical study on an extraction phenomenon of liquids occurring at an air ga......

Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1×106 Ωcm were achieved by vanadium doping......

为了提升110kV工频电压比例标准自校系统国家标准的准确度等级,使其满足电网快速发展和开展0.005级及以下准确度级别电压互感器的......

用辉光放电质谱（GDMS）测量了原生液封直接（LEC）磷化铟（InP）的杂质含量。利用霍尔效应测到的非掺LEC－InP的自由电子浓度明显高于净施主杂质......

研究了钒掺杂生长半绝缘6H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6H-SiC中,氮是主要的剩余浅施主杂质.通过较......

研究了2100keV高能量钒注入4H-SiC制备半绝缘层的方法和特性，注入层的浓度分布用蒙特卡罗分析软件TRIM进行模拟．采用一种台面结构进......

The advancements in the technology development for silicon carbide(SiC) lateral devices are summarized in the past years......

选用钒掺杂浓度为0．2at％的高质量6H-SiC晶体，电阻率为7．0×10^8Ω·cm，研制出超快大功率SiC光导开关．在脉冲宽度为20ns的光源激......