TRANSCONDUCTANCE相关论文
The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-Si......
,Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at hi
Based on the investigation of the influence of temperatures on parameters, including polarization, electron mobility, th......
The degradation of transconductance (G) of a gate-modulated generation current IGD in a LDD nMOSFET is investigated.The ......
On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping p
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
报道了生长在蓝宝石衬底上的AlGaN/GaN HEMT器件的制造工艺以及在室温下器件的性能.器件的栅长为1.0μm,源漏间距为4.0μm.器件的......
通过参数调整和工艺简化,制备了应变Si沟道的SiGe NMOS晶体管.该器件利用弛豫SiGe缓冲层上的应变Si层作为导电沟道,相比于体Si器件......
提出五种高阶全极点跨导电容带通滤波器设计方法。该滤波器与ＭＯＳ工艺兼容，便于单片集成。文中给出了带通滤波器的设计实例和ＰＳＰＩＣＥ模拟分析，说......
本文分析了双平衡模拟乘法器的原理,并讨论其在广播电视接收机中的一些应用....
设计了一个轨到轨输入输出范围的低噪声运算放大器。在输入级采用电流补偿的方法来稳定该运算放大器在整个输入共模范围内的跨导，在......
Basing on the state variable method, a block diagram of the current-mode biquad active circuit was proposed, whose integ......
本文讨论了由集成电路、晶体管与电子管组成的延时可调、宽频带混响、胆石组合音响的设计与制作。......
给出了一种常用两级低电压CMOS运算放大器的输入级、中间增益级及输出级的原理电路图,并阐述其主要工作特性.输入级采用了NMOS管和......
介绍了在干氧和氢氧合成两种不同工艺和不同栅氧层厚度情况下,CMOS运算放大器电路的电离辐照响应规律.并通过对其单管特性及内部单......
在建立正确模型的基础上,运用ISE软件的二维仿真,模拟了4H-SiC MESFET在交流小信号条件下,表面陷阱和体陷阱对跨导和漏电导随频率......
本文提出一种高阶全极点OTA-C低通滤波器设计方法.用该方法对二～七阶Butterworth最平坦型低通滤波器进行了设计和SPICE模拟分析。同......
报道了蓝宝石衬底上AlGaN／GaN HFET的制备以及室温下器件的性能。器件栅长为0．8μm，源漏间距为3μm，得到器件的最大漏电流密度为0．7A／mm，......
介绍一种应用于涡轮叶片温度检测系统中的峰值采样电路,采用集成和分立元件混合的跨导型峰值采样电路。经仿真和实验验证,该电路具......
用国产ＭＢＥ调，制掺杂材料研制了具有难熔金属硅化物栅的耗尽型高电子迁移率晶体器件。这种低噪声器件的栅长和栅宽分别为１．２－１．５μｍ和２×１６０μｍ。......
借助ISE软件,以调试后各参数性能优良的图形化SOI LDMOS器件为仿真平台,研究并分析了栅氧化层厚度,漂移区浓度,沟道浓度,SOI层厚度......
本文提出了一种新的利用跨导运放ＯＴＡ精确实现电压－电流型硬限幅函数神经元方法，它的主要特点是容易实现、且神经元的输幅可调。......
本文较为详细地描述了凹陷沟道ＳＯＩ器件的结构和工艺制造技术，采用凹陷沟道技术制备的ＳＯＩ器件的性能明显优于常规厚膜部分耗尽和常规薄膜全......
通过参数调整和工艺简化，制备了应变Si沟道的NMOS晶体管，该器件利用也豫SiGe缓冲层上的应变Si层作为导电沟道，相比于体Si器件在1V栅压......
提出了一种新的求解线性规划的神经网络及其有源跨导－Ｃ实现。其特点是结构简单，便于采用ＣＭＯＳ工艺集成。......
本文提出并设计了一种新型注入信号的功率源,说明了它的工作原理,重点指出其设计上的特点,最后计算了此功率源的放大倍数及跨导.......
New Voltage Mode Sinusoidal Oscillator Using Voltage Differencing Transconductance Amplifiers (VDTAs
The purpose of this paper is to introduce a new electronically controlled voltage mode sinusoidal oscillator (VMSO) usin......
Realization of a New Current Mode Second-Order Biquad Using Two Current Follower Transconductance Am
A new circuit for realization of universal current-mode filter using current Follower Transconductance Amplifiers (CFTAs......
This work presents a novel current-mode (CM) lossless integrator that uses one current differencing differential input t......
In this paper, an application of voltage differencing voltage transconductance amplifier (VDVTA) in the realization of v......
This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that ......
This paper presents a new current-mode single input multi output (SIMO) type biquad employing one voltage differencing t......
An Ultra Low-Voltage and Low-Power OTA Using Bulk-Input Technique and Its Application in Active-RC F
This paper presents the design of a two-stage bulk-input pseudo-differential operational transconductance amplifier (OTA......
A switched capacitor biquad filter using current differencing transconductance amplifier (CDTA) is presented in this pap......
Design and Analysis of a Power Efficient Linearly Tunable Cross-Coupled Transconductor Having Separa
A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls thir......
In this paper we present a wave active filter based on Voltage Differencing Transconductance Amplifiers (VDTAs). The syn......
经研究发现在很低温度下,随着温度的降低,MOSFET的阈电压上升;阈电压的温度梯度减小;跨导急剧上升。这表明,MOSFET在很低温度下的......
Analytical-Numerical Model for the Transconductance of Microwave AIGaN/GaN High Electron Mobility Tr
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Based on sixteen nullor-mirror models of the voltage differencing transconductance amplifier (VDTA) and port admittance ......
CMOS Realization of VDTA Based Electronically Tunable Wave Active Filter with Minimum Power Consumpt
This paper presents a higher order voltage and current mode low pass or high pass filter for wave active filter based on......
CMOS Realization of VDVTA and OTA Based Fully Electronically Tunable First Order All Pass Filter wit
This paper presents a new first order all pass filter configurations. The proposed all pass filter configuration employs......
