WNx films with different composition are formed on Si(100) and GaAs (100) by the reactive rf sputtering in a mixed nitro......

本文用俄歇能谱、卢瑟福背散射、电流-电压和电容-电压等方法研究了射频磁控反应溅射制备的WN_x/n-GaAs肖特基势垒特性。结果表明,......