heteroepitaxial相关论文
Based on the Fuchs and Sondheimer thin film theory (F-S film theory) and a revised valence band split-off model, conside......
Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman
As an important wide-bandgap semiconductor,gallium nitride(GaN)has attracted considerable attention.This paper describes......
...
Based on the Fuchs and Sondheimer thin film theory (F-S film theory) and a revised valence band split-off model, conside......
评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望....
